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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 81, Issue 2, Pages 70–73 (Mi jetpl1655)  
This article is cited in 4 scientific papers (total in 4 papers)

CONDENSED MATTER

Photoluminescence kinetics of wurtzite GaN quantum dots in an AlN matrix

D. D. Ria, V. G. Mansurova, A. Yu. Nikitina, A. K. Gutakovskiia, K. S. Zhuravleva, P. Troncb

a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
b Laboratoire d'Optique Physique, Ecole Superieure de Physique et Chimie Industrielles, 75005 Paris, France
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Abstract: The photoluminescence (PL) of GaN quantum dots in an AlN matrix is studied. It is found that the maximum of the PL line does not shift when the laser excitation power varies. The transient PL spectra indicate that the quenching kinetics is nonexponential and the quenching law depends on the spectral range. The experimental data are explained in the framework of a model taking into account the strong built-in electric field in wurtzite structures and the transport of charge carriers between them.
Received: 07.12.2004
English version:
Journal of Experimental and Theoretical Physics Letters, 2005, Volume 81, Issue 2, Pages 62–65
DOI: https://doi.org/10.1134/1.1887916
Bibliographic databases:
Document Type: Article
PACS: 78.55.Cr, 78.67.Hc
Language: Russian
Citation: D. D. Ri, V. G. Mansurov, A. Yu. Nikitin, A. K. Gutakovskii, K. S. Zhuravlev, P. Tronc, “Photoluminescence kinetics of wurtzite GaN quantum dots in an AlN matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:2 (2005), 70–73; JETP Letters, 81:2 (2005), 62–65
Citation in format AMSBIB
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\paper Photoluminescence kinetics of wurtzite GaN quantum dots in an AlN matrix
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2005
\vol 81
\issue 2
\pages 70--73
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\transl
\jour JETP Letters
\yr 2005
\vol 81
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\pages 62--65
\crossref{https://doi.org/10.1134/1.1887916}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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