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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2003, Volume 78, Issue 4, Pages 276–280
(Mi jetpl2528)
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This article is cited in 3 scientific papers (total in 3 papers)
Many-electron Coulomb correlations in hopping transport along layers of quantum dots
A. I. Yakimova, A. V. Nenasheva, A. V. Dvurechenskiia, M. N. Timonovab a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Abstract:
Experimental data are analyzed on the hopping transport of holes in two-dimensional layers of Ge/Si(001) quantum dots (QDs) under conditions of the long-range Coulomb interaction of charge carriers localized in QDs, when the temperature dependence of the conductivity obeys the Efros-Shklovskii law. It is found that the parameters of hopping conduction significantly deviate from the predictions of the model of one-electron excitations in «Coulomb glasses». Many-particle Coulomb correlations associated with the motion of holes localized in QDs play a decisive role in the processes of hopping charge transfer between QDs. These correlations lead to a substantial decrease in the Coulomb barriers for the tunneling of charge carriers.
Received: 21.07.2003
Citation:
A. I. Yakimov, A. V. Nenashev, A. V. Dvurechenskii, M. N. Timonova, “Many-electron Coulomb correlations in hopping transport along layers of quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 78:4 (2003), 276–280; JETP Letters, 78:4 (2003), 241–245
Linking options:
https://www.mathnet.ru/eng/jetpl2528 https://www.mathnet.ru/eng/jetpl/v78/i4/p276
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