A. G. Zhuravlev, V. L. Alperovich, “Generation and removal of adatom-induced electronic states on the Cs/GaAs(001) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:9 (2008), 702–706; JETP Letters, 88:9 (2009), 611

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2008, Volume 88, Issue 9, Pages 702–706 (Mi jetpl277)

This article is cited in 5 scientific papers (total in 5 papers)

CONDENSED MATTER

Generation and removal of adatom-induced electronic states on the Cs/GaAs(001) surface

A. G. Zhuravlev^ab, V. L. Alperovich^ab

^a Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090, Russia
^b Novosibirsk State University, Novosibirsk, 630090, Russia

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Abstract: A nonmonotonic behavior of band bending φ_S as a function of cesium coverage ϑ on the Cs/GaAs(001) surface is observed in the form of several maxima and minima. This behavior indicates the formation of the quasi-discrete spectrum of the adatom-induced electronic surface states. The hysteresis of the φ_S(ϑ) dependence under adsorption and subsequent thermodesorption of cesium indicates the metastability of the Cs/GaAs(001) system.

Received: 18.09.2008

English version:
Journal of Experimental and Theoretical Physics Letters, 2009, Volume 88, Issue 9, Pages 611–615
DOI: https://doi.org/10.1134/S0021364008210145

Bibliographic databases:

Document Type: Article

PACS: 68.35.Bs, 73.61.Ey, 78.66.Fd

Language: Russian

Citation: A. G. Zhuravlev, V. L. Alperovich, “Generation and removal of adatom-induced electronic states on the Cs/GaAs(001) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:9 (2008), 702–706; JETP Letters, 88:9 (2009), 611–615

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This publication is cited in the following 5 articles:

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