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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 96, Issue 11, Pages 815–820 (Mi jetpl3301)  
This article is cited in 36 scientific papers (total in 36 papers)

CONDENSED MATTER

Weak localization of Dirac fermions in HgTe quantum wells

D. A. Kozlovab, Z. D. Kvonba, N. N. Mikhailova, S. A. Dvoretskiia

a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
b Novosibirsk State University
Full-text PDF (498 kB) Citations (36)
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Abstract: Weak localization in a system of gapless two-dimensional Dirac fermions in HgTe quantum wells with thickness $d = 6.6$ nm, which corresponds to the transition from a normal to an inverted spectrum, has been investigated experimentally. A negative logarithmic correction to the conductivity of the system has been observed both at the Dirac point and in the vicinity of this point. The anomalous magnetoresistance of two-dimensional Dirac fermions is positive. This indicates that weak localization in the system of two-dimensional Dirac fermions occurs owing to localization and interaction effects in the presence of rapid spin relaxation.
Received: 31.10.2012
English version:
Journal of Experimental and Theoretical Physics Letters, 2012, Volume 96, Issue 11, Pages 730–734
DOI: https://doi.org/10.1134/S0021364012230099
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretskii, “Weak localization of Dirac fermions in HgTe quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:11 (2012), 815–820; JETP Letters, 96:11 (2012), 730–734
Citation in format AMSBIB
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    • This publication is cited in the following 36 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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