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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2013, Volume 97, Issue 5, Pages 313–318
DOI: https://doi.org/10.7868/S0370274X1305007X (Mi jetpl3370) 		 
This article is cited in 12 scientific papers (total in 12 papers)

CONDENSED MATTER

Fine structure of the exciton states in InAs quantum dots

A. V. Gaislera, A. S. Yaroshevicha, I. A. Derebezova, A. K. Kalagina, A. K. Bakarova, A. I. Toropova, D. V. Shcheglovab, V. A. Gaislerac, A. V. Latyshevab, A. L. Aseeva

a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
b Novosibirsk State University
c Novosibirsk State Technical University
Full-text PDF (525 kB) Citations (12)
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DOI: https://doi.org/10.7868/S0370274X1305007X
Abstract: The fine structure of the exciton states in InAs quantum dots grown by the Stranski–Krastanov method with short growth interruptions has been studied by microphotoluminescence at cryogenic temperatures. It has been demonstrated that, with increasing quantum-dot size, the splitting of the exciton states increases steadily to $\sim10^{2}\,\mu$eV. It has been shown that, in the exciton energy range of $1.3$–$1.4$ eV, the magnitude of this splitting is comparable to the natural width of the exciton lines. This result is important for the development of entangled photon pair emitters based on InAs quantum dots.
Received: 05.02.2013
English version:
Journal of Experimental and Theoretical Physics Letters, 2013, Volume 97, Issue 5, Pages 274–278
DOI: https://doi.org/10.1134/S0021364013050056
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Gaisler, A. S. Yaroshevich, I. A. Derebezov, A. K. Kalagin, A. K. Bakarov, A. I. Toropov, D. V. Shcheglov, V. A. Gaisler, A. V. Latyshev, A. L. Aseev, “Fine structure of the exciton states in InAs quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:5 (2013), 313–318; JETP Letters, 97:5 (2013), 274–278
Citation in format AMSBIB
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    • This publication is cited in the following 12 articles:
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