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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2013, Volume 98, Issue 5, Pages 309–315 DOI: https://doi.org/10.7868/S0370274X13170062
(Mi jetpl3510)
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This article is cited in 20 scientific papers (total in 20 papers)
CONDENSED MATTER
Novel approach to tailoring the electronic properties of single-walled carbon nanotubes by the encapsulation of high-melting gallium selenide using a single-step process
M. V. Kharlamova M. V. Lomonosov Moscow State University, Department of Materials Science
DOI:
https://doi.org/10.7868/S0370274X13170062
Abstract:
A single-step method of filling the channels of single-walled carbon nanotubes with the melt of refractory GaSe is proposed and successfully implemented. The filled nanotubes are investigated by optical absorption spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. It is found that charge transfer from the nanotube walls to embedded GaSe accompanied by lowering of the Fermi level in nanotubes occurs in the obtained nanocomposite; i.e., acceptor doping of nanotubes takes place.
Received: 18.07.2013 Revised: 07.08.2013
Citation:
M. V. Kharlamova, “Novel approach to tailoring the electronic properties of single-walled carbon nanotubes by the encapsulation of high-melting gallium selenide using a single-step process”, Pis'ma v Zh. Èksper. Teoret. Fiz., 98:5 (2013), 309–315; JETP Letters, 98:5 (2013), 272–277
Linking options:
https://www.mathnet.ru/eng/jetpl3510 https://www.mathnet.ru/eng/jetpl/v98/i5/p309
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