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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2013, Volume 98, Issue 10, Pages 676–681 DOI: https://doi.org/10.7868/S0370274X13220050
(Mi jetpl3575)
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This article is cited in 10 scientific papers (total in 10 papers)
CONDENSED MATTER
Engineering near-surface electron states in three-dimensional
topological insulators
V. N. Men'shovab, V. V. Tugushevcab, E. V. Chulkovdb a National Research Centre "Kurchatov Institute"
b Tomsk State University
c A. M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow
d Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, San Sebastian, Basque Country
DOI:
https://doi.org/10.7868/S0370274X13220050
Abstract:
Using the continual model of a semi-infinite three dimensional (3D) topological insulator (TI)
we study the effect of the surface potential (SP) on the formation of helical topological states near the
surface. The results reveal that spatial profile and spectrum of these states strongly depend on the SP type
and strength. We pay special attention to the 3D TI substrate/non-magnetic insulating overlayer system to
illustrate the principles of the topological near-surface states engineering.
Received: 05.08.2013 Revised: 03.10.2013
Citation:
V. N. Men'shov, V. V. Tugushev, E. V. Chulkov, “Engineering near-surface electron states in three-dimensional
topological insulators”, Pis'ma v Zh. Èksper. Teoret. Fiz., 98:10 (2013), 676–681; JETP Letters, 98:10 (2013), 603–608
Linking options:
https://www.mathnet.ru/eng/jetpl3575 https://www.mathnet.ru/eng/jetpl/v98/i10/p676
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