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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2014, Volume 99, Issue 12, Pages 824–826
DOI: https://doi.org/10.7868/S0370274X1412008X (Mi jetpl3762) 		 
CONDENSED MATTER

Near-field effect in the absorption spectrum of impurities in crystals

V. Ya. Aleshkin, L. V. Gavrilenko

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
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DOI: https://doi.org/10.7868/S0370274X1412008X
Abstract: The effect of the near-field interaction of shallow donors in GaAs on the intracenter absorption spectrum of impurities has been considered. It has been shown that the near-field interaction leads to broadening of the absorption line, which increases with the donor density. The absorption line shape is no longer Lorentzian: its low-frequency wing becomes more prolonged than the high-frequency wing.
Received: 16.05.2014
Revised: 23.05.2014
English version:
Journal of Experimental and Theoretical Physics Letters, 2014, Volume 99, Issue 12, Pages 712–714
DOI: https://doi.org/10.1134/S0021364014120029
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Ya. Aleshkin, L. V. Gavrilenko, “Near-field effect in the absorption spectrum of impurities in crystals”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:12 (2014), 824–826; JETP Letters, 99:12 (2014), 712–714
Citation in format AMSBIB
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