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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2015, Volume 101, Issue 2, Pages 118–123
DOI: https://doi.org/10.7868/S0370274X15020095 (Mi jetpl4531) 		 
This article is cited in 7 scientific papers (total in 7 papers)

CONDENSED MATTER

Electric injection and detection of spin-polarized electrons in lateral spin valves on ferromagnetic metal-semiconductor InSb heterojunctions

N. A. Viglin, V. V. Ustinov, V. M. Tsvelikhovskaya, T. N. Pavlov

Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
Full-text PDF (310 kB) Citations (7)
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DOI: https://doi.org/10.7868/S0370274X15020095
Abstract: A lateral spintronic device has been created on the basis of the InSb semiconductor with an iron injector and an iron detector of spin-polarized electrons that are separated from the semiconductor channel by a MgO tunnel barrier. The electric injection and detection of spin-polarized electrons in a single device have been demonstrated. Data on the parameters of the spin subsystem of conduction electrons in the InSb semiconductor and spin polarization of injected electrons in the semiconductor on the Fe/MgO/InSb heterojunction have been obtained from the measurements of the Hanle effect.
Received: 11.11.2014
Revised: 02.12.2014
English version:
Journal of Experimental and Theoretical Physics Letters, 2015, Volume 101, Issue 2, Pages 113–117
DOI: https://doi.org/10.1134/S0021364015020137
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Viglin, V. V. Ustinov, V. M. Tsvelikhovskaya, T. N. Pavlov, “Electric injection and detection of spin-polarized electrons in lateral spin valves on ferromagnetic metal-semiconductor InSb heterojunctions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:2 (2015), 118–123; JETP Letters, 101:2 (2015), 113–117
Citation in format AMSBIB
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    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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