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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2015, Volume 102, Issue 8, Pages 610–614
DOI: https://doi.org/10.7868/S0370274X15200126 (Mi jetpl4769) 		 
This article is cited in 30 scientific papers (total in 30 papers)

CONDENSED MATTER

Charge transport mechanism in thin films of amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$

D. R. Islamovab, A. G. Chernikovac, M. G. Kozodaevc, A. M. Markeevc, T. V. Perevalovab, V. A. Gritsenkoab, O. M. Orlovd

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
b Novosibirsk State University, Novosibirsk, 630090, Russia
c Moscow Institute of Physics and Technology, Dolgoprudnyi, Moscow region, 141700, Russia
d Research Institute of Molecular Electronics, Zelenograd, Moscow, 124460, Russia
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DOI: https://doi.org/10.7868/S0370274X15200126
Abstract: The charge transport mechanism in thin amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ films has been studied. It has been shown that the transport mechanism in studied materials does not depend on the crystal phase and is phonon-assisted tunneling between traps. The comparison of the experimental current-voltage characteristics of TiN/Hf$_{0.5}$Zr$_{0.5}$O$_2$/Pt structures with the calculated ones provides the trap parameters: thermal energy of $1.25$ eV and the optical energy of $2.5$ eV. The trap concentration has been estimated as ${\sim}10^{19}{-}10^{20}$ cm$^{-3}$.
Received: 11.08.2015
Revised: 28.08.2015
English version:
Journal of Experimental and Theoretical Physics Letters, 2015, Volume 102, Issue 8, Pages 544–547
DOI: https://doi.org/10.1134/S0021364015200047
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. R. Islamov, A. G. Chernikova, M. G. Kozodaev, A. M. Markeev, T. V. Perevalov, V. A. Gritsenko, O. M. Orlov, “Charge transport mechanism in thin films of amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:8 (2015), 610–614; JETP Letters, 102:8 (2015), 544–547
Citation in format AMSBIB
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\paper Charge transport mechanism in thin films of amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
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\vol 102
\issue 8
\pages 610--614
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    • This publication is cited in the following 30 articles:
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