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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2016, Volume 104, Issue 6, Pages 402–405 DOI: https://doi.org/10.7868/S0370274X16180053
(Mi jetpl5066)
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This article is cited in 10 scientific papers (total in 10 papers)
CONDENSED MATTER
Mobility of Dirac electrons in HgTe quantum wells
A. A. Dobretsovaab, Z. D. Kvonab, L. S. Braginskiiab, M. V. Entinab, N. N. Mikhailovab a Novosibirsk State University, Novosibirsk, Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
DOI:
https://doi.org/10.7868/S0370274X16180053
Abstract:
The mobility of Dirac electrons (DEs) in HgTe quantum wells with the thickness close to the critical value corresponding to the transition from the direct to inverted spectrum has been studied experimentally and theoretically. The nonmonotonic dependence of this mobility on the electron density is found experimentally. The theory of DE scattering on impurities and fluctuations of the thickness of a well caused by its roughnesses is elaborated. This theory is in good agreement with experiment and explains the observed nonmonotonicity by the decrease in the ratio of the de Broglie wavelength of DEs to the characteristic size of the roughness with the increase in their concentration.
Received: 27.06.2016 Revised: 27.07.2016
Citation:
A. A. Dobretsova, Z. D. Kvon, L. S. Braginskii, M. V. Entin, N. N. Mikhailov, “Mobility of Dirac electrons in HgTe quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:6 (2016), 402–405; JETP Letters, 104:6 (2016), 388–391
Linking options:
https://www.mathnet.ru/eng/jetpl5066 https://www.mathnet.ru/eng/jetpl/v104/i6/p402
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