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This article is cited in 17 scientific papers (total in 17 papers)
CONDENSED MATTER
Magnetic memory effects in triglycine sulfate ferroelectric crystals
R. V. Gainutdinov, E. S. Ivanova, E. A. Petrzhik, A. K. Lashkova, T. R. Volk Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics, Russian Academy of Sciences, Moscow, Russia
Abstract:
The effect of a magnetic field on the processes of relaxation of the defect structure relaxation in a triglycine sulfate (TGS) ferroelectric (nonmagnetic) crystal has been observed for the first time. The atomic-force microscopy study has shown that the application of a static weak magnetic field (2 T, 20 min) significantly changes the size distribution of defect nanoclusters characteristic of TGS. Previously known macroscopic aftereffects of the magnetic field in TGS (slow relaxation of the dielectric susceptibility, symmetrization of $P$-$E$ dielectric hysteresis loops, etc.) can be explained by the redistribution of pinning centers of domain walls caused by the magnetically induced reconfiguration of the defect structure.
Received: 09.06.2017
Citation:
R. V. Gainutdinov, E. S. Ivanova, E. A. Petrzhik, A. K. Lashkova, T. R. Volk, “Magnetic memory effects in triglycine sulfate ferroelectric crystals”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:2 (2017), 84–89; JETP Letters, 106:2 (2017), 97–102
Linking options:
https://www.mathnet.ru/eng/jetpl5320 https://www.mathnet.ru/eng/jetpl/v106/i2/p84
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