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This article is cited in 3 scientific papers (total in 3 papers)
DISCUSSION
On the origin of nonclassical light generation upon resonant excitation of a GaAs semiconductor microcavity
A. A. Demeneva, D. R. Domaretskiia, A. L. Parakhonskiia, M. V. Lebedevb a Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Russia
b Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Russia
Abstract:
It was shown in JETP Lett. 102, 508 (2015) that the intensity correlation function of the emission from a high-quality-factor semiconductor microcavity under resonant optical pumping exhibits an oscillatory behavior with an unexpectedly long oscillation period and a long decay time, which fall in the nanosecond range. A further investigation demonstrates that the origin of these oscillations is not related to the weak Rabi interaction between long-lived localized exciton states in the quantum well and the electromagnetic field of the microcavity mode. It proves that the semiconductor microcavity plays a secondary role in the observation of nonclassical light: it provides the spectral selection of the modes of the pump laser. We believe that intrinsic instabilities lead to the chaotic excitation of spiking in the laser modes under a constant operating current.
Received: 08.09.2017
Citation:
A. A. Demenev, D. R. Domaretskii, A. L. Parakhonskii, M. V. Lebedev, “On the origin of nonclassical light generation upon resonant excitation of a GaAs semiconductor microcavity”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:8 (2017), 528–533; JETP Letters, 106:8 (2017), 549–554
Linking options:
https://www.mathnet.ru/eng/jetpl5403 https://www.mathnet.ru/eng/jetpl/v106/i8/p528
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