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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2019, Volume 110, Issue 4, Pages 248–254
DOI: https://doi.org/10.1134/S0370274X19160070 (Mi jetpl5979) 		 
This article is cited in 3 scientific papers (total in 3 papers)

CONDENSED MATTER

Effective injection of spins from a ferromagnetic metal to the InSb semiconductor

N. A. Viglina, V. M. Tsvelikhovskayaa, N. A. Kuleshb, T. N. Pavlova

a Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, Russia
b Ural Federal University, Yekaterinburg, Russia
Full-text PDF (369 kB) Citations (3)
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DOI: https://doi.org/10.1134/S0370274X19160070
Abstract: Conditions for the fabrication of lateral semiconductor spin devices with a high efficiency of spin injection have been revealed. Technological aspects of the formation of magnetic elements of a spin device, its electric contacts, and a thin MgO dielectric layer necessary for the efficient injection of spin-polarized electrons have been considered in detail. The degree of polarization of electrons for InSb about 25% has been obtained for the first time.
Funding agency Grant number
Russian Foundation for Basic Research 19-02-00038
Ministry of Education and Science of the Russian Federation ААААА18-118020290104-2
This work was supported by the Ministry of Science and Higher Education of the Russian Federation (theme no. AAAA-A18-118020290104-2 “Spin”) and by the Russian Foundation for Basic Research (project no. 19-02-00038).
Received: 20.06.2019
Revised: 11.07.2019
Accepted: 13.07.2019
English version:
Journal of Experimental and Theoretical Physics Letters, 2019, Volume 110, Issue 4, Pages 273–278
DOI: https://doi.org/10.1134/S0021364019160100
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Viglin, V. M. Tsvelikhovskaya, N. A. Kulesh, T. N. Pavlov, “Effective injection of spins from a ferromagnetic metal to the InSb semiconductor”, Pis'ma v Zh. Èksper. Teoret. Fiz., 110:4 (2019), 248–254; JETP Letters, 110:4 (2019), 273–278
Citation in format AMSBIB
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    • This publication is cited in the following 3 articles:
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