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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2020, Volume 111, Issue 2, Pages 107–111
DOI: https://doi.org/10.31857/S0370274X20020101 (Mi jetpl6093) 		 
This article is cited in 7 scientific papers (total in 7 papers)

CONDENSED MATTER

Microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well

A. S. Yaroshevicha, Z. D. Kvonab, G. M. Gusevc, N. N. Mikhailovab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
b Novosibirsk State University, Novosibirsk, 630090 Russia
c Instituto de Fisica da Universidade de São Paulo, 135960-170 São Paulo, SP, Brazil
Full-text PDF (521 kB) Citations (7)
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DOI: https://doi.org/10.31857/S0370274X20020101
Abstract: The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110–169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.
Funding agency Grant number
Russian Science Foundation 16-12-10041-П
Fundação de Amparo à Pesquisa do Estado de São Paulo
This work was supported by the Russian Science Foundation (project no. 16-12-10041-P) and by the São Paulo Research Foundation (FAPESP, Brazil).
Received: 06.11.2019
Revised: 06.12.2019
Accepted: 06.12.2019
English version:
Journal of Experimental and Theoretical Physics Letters, 2020, Volume 111, Issue 2, Pages 121–125
DOI: https://doi.org/10.1134/S0021364020020113
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Yaroshevich, Z. D. Kvon, G. M. Gusev, N. N. Mikhailov, “Microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well”, Pis'ma v Zh. Èksper. Teoret. Fiz., 111:2 (2020), 107–111; JETP Letters, 111:2 (2020), 121–125
Citation in format AMSBIB
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