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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2020, Volume 112, Issue 3, Pages 172–173
DOI: https://doi.org/10.31857/S1234567820150057 (Mi jetpl6228) 		 
This article is cited in 4 scientific papers (total in 4 papers)

CONDENSED MATTER

Microstructure and formation mechanism of V-defects in the InGaN/GaN multiple quantum wells with a high in content

H. Wanga, Q. Tanba, X. Hea

a Academy of Electronic Information and Electrical Engineering, Xiangnan University, 423000 Chenzhou, China
b Institute of Physics and Information Science, Hunan Normal University, 410081 Changsha, China
Full-text PDF (117 kB) Citations (4)
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DOI: https://doi.org/10.31857/S1234567820150057
Received: 02.06.2020
Revised: 19.06.2020
Accepted: 19.06.2020
English version:
Journal of Experimental and Theoretical Physics Letters, 2020, Volume 112, Issue 3, Pages 157–160
DOI: https://doi.org/10.1134/S0021364020150035
Bibliographic databases:
Document Type: Article
Language: English
Citation: H. Wang, Q. Tan, X. He, “Microstructure and formation mechanism of V-defects in the InGaN/GaN multiple quantum wells with a high in content”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:3 (2020), 172–173; JETP Letters, 112:3 (2020), 157–160
Citation in format AMSBIB
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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