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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2024, Volume 120, Issue 5, Pages 367–373
DOI: https://doi.org/10.31857/S0370274X24090081 (Mi jetpl7316) 		 
CONDENSED MATTER

Local diagnostics of spin defects in irradiated SiC Schottky diodes

K. V. Likhacheva, A. M. Skomorokhova, M. V. Uchaeva, Yu. A. Uspenskayaa, V. V. Kozlovskib, M. E. Levinshteĭna, I. A. Eliseeva, A. N. Smirnova, D. D. Kramushchenkoa, R. A. Babuntsa, P. G. Baranova

a Ioffe Institute, 194021, St. Petersburg, Russia
b Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia
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DOI: https://doi.org/10.31857/S0370274X24090081
Abstract: The spectra of anticrossing of spin sublevels have been recorded and spin-3/2 color centers have been identified for the first time in commercially available 4H-SiC Schottky diodes irradiated with 0.9-MeV electrons or 15-MeV protons. The effect of the irradiation density on the defect formation has been shown. It has been demonstrated that the increase in the temperature at which proton irradiation is carried out acts as a short-term annealing, leading to a decrease in the concentration of point defects.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation 075-15-2021-1349
Russian Science Foundation 22-12-00003
Yu.A. Uspenskaya, V.V. Kozlovski, M.E. Levinshtein, and I.A. Eliseev acknowledge the support of the Russian Science Foundation (project no. 22-12-00003, https://rscf.ru/project/22-12-00003/), and R.A. Babunts acknowledges the support of the Ministry of Science and Higher Education of the Russian Federation (project no.В 075-15-2021-1349).
Received: 23.07.2024
Revised: 31.07.2024
Accepted: 31.07.2024
English version:
Journal of Experimental and Theoretical Physics Letters, 2024, Volume 120, Issue 5, Pages 354–359
DOI: https://doi.org/10.1134/S0021364024602707
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. V. Likhachev, A. M. Skomorokhov, M. V. Uchaev, Yu. A. Uspenskaya, V. V. Kozlovski, M. E. Levinshteǐn, I. A. Eliseev, A. N. Smirnov, D. D. Kramushchenko, R. A. Babunts, P. G. Baranov, “Local diagnostics of spin defects in irradiated SiC Schottky diodes”, Pis'ma v Zh. Èksper. Teoret. Fiz., 120:5 (2024), 367–373; JETP Letters, 120:5 (2024), 354–359
Citation in format AMSBIB
\Bibitem{LikSkoUch24}
\by K.~V.~Likhachev, A.~M.~Skomorokhov, M.~V.~Uchaev, Yu.~A.~Uspenskaya, V.~V.~Kozlovski, M.~E.~Levinshte{\v\i}n, I.~A.~Eliseev, A.~N.~Smirnov, D.~D.~Kramushchenko, R.~A.~Babunts, P.~G.~Baranov
\paper Local diagnostics of spin defects in irradiated SiC Schottky diodes
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2024
\vol 120
\issue 5
\pages 367--373
\mathnet{http://mi.mathnet.ru/jetpl7316}
\crossref{https://doi.org/10.31857/S0370274X24090081}
\edn{https://elibrary.ru/DHDATJ}
\transl
\jour JETP Letters
\yr 2024
\vol 120
\issue 5
\pages 354--359
\crossref{https://doi.org/10.1134/S0021364024602707}
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