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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2024, Volume 120, Issue 11, Pages 856–862
DOI: https://doi.org/10.31857/S0370274X24120064 (Mi jetpl7387) 		 
CONDENSED MATTER

Threshold photogeneration of biexcitons in direct-gap semiconductor nanocrystals

S. A. Fomichev, V. A. Burdov

Lobachevsky State University of Nizhny Novgorod, 603022, Nizhny Novgorod, Russia
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DOI: https://doi.org/10.31857/S0370274X24120064
Abstract: The generation of two electron–hole pairs (a biexciton) in a nanocrystal of a direct-gap semiconductor with a nondegenerate conduction band upon the absorption of a single photon with the energy equal to twice the band gap of the nanocrystal is considered. It is shown that the process can take place only in the presence of the interaction of electrons both with each other and with the crystal-lattice field. The rate of this process is calculated and found to depend strongly on the nanocrystal size.
Funding agency Grant number
Russian Science Foundation 23-22-00275
This study was supported by the Russian Science Foundation, project no. 23-22-00275.
Received: 01.10.2024
Revised: 13.10.2024
Accepted: 18.10.2024
English version:
Journal of Experimental and Theoretical Physics Letters, 2024, Volume 120, Issue 11, Pages 822–828
DOI: https://doi.org/10.1134/S0021364024603749
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. A. Fomichev, V. A. Burdov, “Threshold photogeneration of biexcitons in direct-gap semiconductor nanocrystals”, Pis'ma v Zh. Èksper. Teoret. Fiz., 120:11 (2024), 856–862; JETP Letters, 120:11 (2024), 822–828
Citation in format AMSBIB
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\by S.~A.~Fomichev, V.~A.~Burdov
\paper Threshold photogeneration of biexcitons in direct-gap semiconductor nanocrystals
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2024
\vol 120
\issue 11
\pages 856--862
\mathnet{http://mi.mathnet.ru/jetpl7387}
\crossref{https://doi.org/10.31857/S0370274X24120064}
\edn{https://elibrary.ru/DNXMXQ}
\transl
\jour JETP Letters
\yr 2024
\vol 120
\issue 11
\pages 822--828
\crossref{https://doi.org/10.1134/S0021364024603749}
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