V. A. Kuz'min, A. S. Kyuregyan, Yu. G. Sorokin, V. V. Fedorov, O. V. Bogorodsky, T. P. Vorontsova, O. S. Zhgutova, V. A. Zlobin, L. A. Kirdyashkina, Yu. M. Loktaev, L. S. Rybachyuk, P. N. Shlygin, “MECHANISMS OF THE BREAKDOWN TENSION REDUCTION IN SILICON HIGH-VOLTAGE MULTI-LAYERED STRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 55:7 (1985), 1419

Zhurnal Tekhnicheskoi Fiziki

RUS ENG

JOURNALS PEOPLE ORGANISATIONS CONFERENCES SEMINARS VIDEO LIBRARY PACKAGE AMSBIB

JavaScript is disabled in your browser. Please switch it on to enable full functionality of the website

	General information
	Latest issue
	Archive
	Guidelines for authors

	Search papers
	Search references

	RSS
	Latest issue
	Current issues
	Archive issues
	What is RSS

Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
	Find

Personal entry:
Login:
Password:
	Save password
	Enter
	Forgotten password?
	Register

Zhurnal Tekhnicheskoi Fiziki, 1985, Volume 55, Issue 7, Pages 1419–1425 (Mi jtf1354)

MECHANISMS OF THE BREAKDOWN TENSION REDUCTION IN SILICON HIGH-VOLTAGE MULTI-LAYERED STRUCTURES

V. A. Kuz'min, A. S. Kyuregyan, Yu. G. Sorokin, V. V. Fedorov, O. V. Bogorodsky, T. P. Vorontsova, O. S. Zhgutova, V. A. Zlobin, L. A. Kirdyashkina, Yu. M. Loktaev, L. S. Rybachyuk, P. N. Shlygin

Full-text PDF (3430 kB)

Received: 16.04.1984
Revised: 16.07.1984

Bibliographic databases:

Document Type: Article

UDC: 537.311.33

Language: Russian

Citation: V. A. Kuz'min, A. S. Kyuregyan, Yu. G. Sorokin, V. V. Fedorov, O. V. Bogorodsky, T. P. Vorontsova, O. S. Zhgutova, V. A. Zlobin, L. A. Kirdyashkina, Yu. M. Loktaev, L. S. Rybachyuk, P. N. Shlygin, “MECHANISMS OF THE BREAKDOWN TENSION REDUCTION IN SILICON HIGH-VOLTAGE MULTI-LAYERED STRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 55:7 (1985), 1419–1425

Citation in format AMSBIB

\Bibitem{KuzKyuSor85}

\by V.~A.~Kuz'min, A.~S.~Kyuregyan, Yu.~G.~Sorokin, V.~V.~Fedorov, O.~V.~Bogorodsky, T.~P.~Vorontsova, O.~S.~Zhgutova, V.~A.~Zlobin, L.~A.~Kirdyashkina, Yu.~M.~Loktaev, L.~S.~Rybachyuk, P.~N.~Shlygin

\paper MECHANISMS OF THE BREAKDOWN TENSION REDUCTION IN SILICON HIGH-VOLTAGE

   MULTI-LAYERED STRUCTURES

\jour Zhurnal Tekhnicheskoi Fiziki

\yr 1985

\vol 55

\issue 7

\pages 1419--1425

\mathnet{http://mi.mathnet.ru/jtf1354}

Linking options:

https://www.mathnet.ru/eng/jtf1354

https://www.mathnet.ru/eng/jtf/v55/i7/p1419

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

Registration to the website

Logotypes