V. P. Avdeeva, V. V. Bezotosnyi, M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, N. V. Mal'kova, M. G. Mil'vidskii, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM) HETEROSTRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984), 551

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Zhurnal Tekhnicheskoi Fiziki, 1984, Volume 54, Issue 3, Pages 551–557 (Mi jtf1707)

Quantum Electronics

LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM) HETEROSTRUCTURES

V. P. Avdeeva, V. V. Bezotosnyi, M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, N. V. Mal'kova, M. G. Mil'vidskii, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko

P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow

Full-text PDF (1005 kB)

Received: 31.03.1983

Bibliographic databases:

Document Type: Article

UDC: 621.378.325

Language: Russian

Citation: V. P. Avdeeva, V. V. Bezotosnyi, M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, N. V. Mal'kova, M. G. Mil'vidskii, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM) HETEROSTRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984), 551–557

Citation in format AMSBIB

\Bibitem{AvdBezVas84}

\by V.~P.~Avdeeva, V.~V.~Bezotosnyi, M.~G.~Vasil'ev, L.~M.~Dolginov, A.~E.~Drakin, V.~P.~Duraev, P.~G.~Eliseev, N.~V.~Mal'kova, M.~G.~Mil'vidskii, B.~N.~Sverdlov, V.~A.~Skripkin, E.~G.~Shevchenko

\paper LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM)

   HETEROSTRUCTURES

\jour Zhurnal Tekhnicheskoi Fiziki

\yr 1984

\vol 54

\issue 3

\pages 551--557

\mathnet{http://mi.mathnet.ru/jtf1707}

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https://www.mathnet.ru/eng/jtf/v54/i3/p551

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