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Zhurnal Tekhnicheskoi Fiziki, 1989, Volume 59, Issue 1, Pages 200–202 (Mi jtf3195)  
Brief Communications

FORMATION OF BETA-SI3N4 HIDDEN LAYER UNDER HIGHLY EFFICIENT ION IRRADIATION (HII) OF SILICONE

I. A. Bachilo, R. V. Gribkovskii, F. F. Komarov, V. A. Mironenko, A. P. Novikov
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Document Type: Article
Language: Russian
Citation: I. A. Bachilo, R. V. Gribkovskii, F. F. Komarov, V. A. Mironenko, A. P. Novikov, “FORMATION OF BETA-SI3N4 HIDDEN LAYER UNDER HIGHLY EFFICIENT ION IRRADIATION (HII) OF SILICONE”, Zhurnal Tekhnicheskoi Fiziki, 59:1 (1989), 200–202
Citation in format AMSBIB
\Bibitem{KomNov89}
\by I.~A.~Bachilo, R.~V.~Gribkovskii, F.~F.~Komarov, V.~A.~Mironenko, A.~P.~Novikov
\paper FORMATION OF BETA-SI3N4 HIDDEN LAYER UNDER HIGHLY EFFICIENT ION
IRRADIATION (HII) OF SILICONE
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 1989
\vol 59
\issue 1
\pages 200--202
\mathnet{http://mi.mathnet.ru/jtf3195}
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  • https://www.mathnet.ru/eng/jtf/v59/i1/p200
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