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Zhurnal Tekhnicheskoi Fiziki, 1991, Volume 61, Issue 1, Pages 195–197 (Mi jtf4143)  
Brief Communications

INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANTED (A-SI) SILICON DURING NANOSECOND LASER ANNEALING PROCESSES

G. D. Ivlev
Full-text PDF (481 kB)
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Document Type: Article
Language: Russian
Citation: G. D. Ivlev, “INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANTED (A-SI) SILICON DURING NANOSECOND LASER ANNEALING PROCESSES”, Zhurnal Tekhnicheskoi Fiziki, 61:1 (1991), 195–197
Citation in format AMSBIB
\Bibitem{1}
\by G.~D.~Ivlev
\paper INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANTED (A-SI) SILICON DURING
NANOSECOND LASER ANNEALING PROCESSES
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 1991
\vol 61
\issue 1
\pages 195--197
\mathnet{http://mi.mathnet.ru/jtf4143}
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