|
Solid-State Electronics
GaAs/AlGaAs- and InGaAs/AlGaAs heterostructures for high-power semiconductor infrared emitters
D. V. Gulyaeva, D. V. Dmitrieva, N. V. Fateeva, D. Yu. Protasovab, A. S. Kozhukhova, K. S. Zhuravleva a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State Technical University
Abstract:
The internal quantum efficiency of GaAs/AlGaAs and InGaAs/AlGaAs heterostructures for infrared light emitter diodes has been determined. The influence of the growth conditions of heterostructures grown by the molecular beam epitaxy and post-growth annealing on the quantum efficiency of heterostructures has been investigated. It has been shown that it is possible to increase the quantum luminescence efficiency of the studied heterostructures up to 75–80% at the average power by the combined optimization of these processes.
Keywords:
GaAs/AlGaAs and InGaAs/AlGaAs heterostructures, internal quantum exit, photoluminescence, molecular-beam epitaxy.
Received: 12.05.2021 Revised: 28.06.2021 Accepted: 01.07.2021
Citation:
D. V. Gulyaev, D. V. Dmitriev, N. V. Fateev, D. Yu. Protasov, A. S. Kozhukhov, K. S. Zhuravlev, “GaAs/AlGaAs- and InGaAs/AlGaAs heterostructures for high-power semiconductor infrared emitters”, Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021), 1727–1731
Linking options:
https://www.mathnet.ru/eng/jtf4898 https://www.mathnet.ru/eng/jtf/v91/i11/p1727
|
|