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Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 91, Issue 1, Pages 76–81
DOI: https://doi.org/10.21883/JTF.2021.01.50276.447-18 (Mi jtf5102) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Solid-State Electronics

Low-frequency noise in light-emitting diodes based on InGaN/GaN quantum wells under electric actions accompanied with an increase in the external quantum efficiency

A. M. Ivanov

Ioffe Institute, St. Petersburg
Full-text PDF (188 kB) Citations (2)
DOI: https://doi.org/10.21883/JTF.2021.01.50276.447-18
Abstract: The results of testing the degradation of light-emitting diode structures with InGaN/GaN quantum wells are reported. An increase in the external quantum efficiency as compared to the initial value is observed after the passage of current of 150–170 mA. Possible physical processes leading to a change in the quantum efficiency and an increase in low-frequency noise are considered.
Keywords: the degradation of light-emitting diodes (degradation of LEDs), the increase in the external quantum efficiency, the low-frequency noise.
Received: 28.12.2018
Revised: 05.07.2018
Accepted: 20.07.2018
English version:
Technical Physics, 2021, Volume 66, Issue 1, Pages 71–76
DOI: https://doi.org/10.1134/S1063784221010114
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. M. Ivanov, “Low-frequency noise in light-emitting diodes based on InGaN/GaN quantum wells under electric actions accompanied with an increase in the external quantum efficiency”, Zhurnal Tekhnicheskoi Fiziki, 91:1 (2021), 76–81; Tech. Phys., 66:1 (2021), 71–76
Citation in format AMSBIB
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\by A.~M.~Ivanov
\paper Low-frequency noise in light-emitting diodes based on InGaN/GaN quantum wells under electric actions accompanied with an increase in the external quantum efficiency
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 91
\issue 1
\pages 76--81
\mathnet{http://mi.mathnet.ru/jtf5102}
\crossref{https://doi.org/10.21883/JTF.2021.01.50276.447-18}
\elib{https://elibrary.ru/item.asp?id=44870291}
\transl
\jour Tech. Phys.
\yr 2021
\vol 66
\issue 1
\pages 71--76
\crossref{https://doi.org/10.1134/S1063784221010114}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85101885064}
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    • This publication is cited in the following 2 articles:
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