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Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 90, Issue 11, Pages 1931–1937
DOI: https://doi.org/10.21883/JTF.2020.11.49986.136-20
(Mi jtf5164)
 

This article is cited in 1 scientific paper (total in 1 paper)

XXIV International Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March 10--13, 2020
Physical electronics

Analysis of electron emission from a single silicon cathode to quasi-vacuum (air) using atomic force microscopy

I. D. Evsikov, S. V. Mitko, P. Yu. Glagolev, N. A. Djuzhev, G. D. Demin

National Research University of Electronic Technology
Abstract: Atomic force microscopy is employed in the experimental study of specific features of the field emission of electrons from a single silicon needle-type cathode to quasi-vacuum (air). Noncontact regime of the atomic force microscopy is used to measure the I–V characteristics of a single cathode with nanometer-scale tip radius at distances of 10 and 20 nm between the cathode tip and the measurement probe. Electric field distributions are simulated for both surface of the tip of a single cathode and tip surfaces of single cathodes in an array, and the results are used to theoretically estimate electric field enhancement versus cathode–probe distance. It is shown that the enhancement factor calculated from the experimental I–V characteristics in the Fowler–Nordheim coordinates is greater than the result of theoretical calculations by several orders of magnitude. This circumstance indicates that additional quantum dimensional effects that play an important role in the generation of the electron emission current in the nanoscale gap must be taken into account.
Keywords: field-electron emission, atomic force microscopy, silicon field-emission nanocathodes, field enhancement factor.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 075-15-2019-1139
This work was supported by the RF Presidential grant no. 075-15-2019-1139.
Received: 16.04.2020
Revised: 16.04.2020
Accepted: 16.04.2020
English version:
Technical Physics, 2020, Volume 65, Issue 11, Pages 1846–1852
DOI: https://doi.org/10.1134/S1063784220110067
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. D. Evsikov, S. V. Mitko, P. Yu. Glagolev, N. A. Djuzhev, G. D. Demin, “Analysis of electron emission from a single silicon cathode to quasi-vacuum (air) using atomic force microscopy”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1931–1937; Tech. Phys., 65:11 (2020), 1846–1852
Citation in format AMSBIB
\Bibitem{EvsMitGla20}
\by I.~D.~Evsikov, S.~V.~Mitko, P.~Yu.~Glagolev, N.~A.~Djuzhev, G.~D.~Demin
\paper Analysis of electron emission from a single silicon cathode to quasi-vacuum (air) using atomic force microscopy
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 90
\issue 11
\pages 1931--1937
\mathnet{http://mi.mathnet.ru/jtf5164}
\crossref{https://doi.org/10.21883/JTF.2020.11.49986.136-20}
\elib{https://elibrary.ru/item.asp?id=44588725}
\transl
\jour Tech. Phys.
\yr 2020
\vol 65
\issue 11
\pages 1846--1852
\crossref{https://doi.org/10.1134/S1063784220110067}
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