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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 12, Pages 1869–1874
DOI: https://doi.org/10.21883/JTF.2019.12.48484.435-18 (Mi jtf5432) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Solids

Nondestructive control of the surface, layers, and charge carrier concentration on SiC substrates and structures

A. V. Markov, M. F. Panov, V. P. Rastegaev, E. N. Sevostyanov, V. V. Trushlyakova

Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (1019 kB) Citations (1)
DOI: https://doi.org/10.21883/JTF.2019.12.48484.435-18
Abstract: Silicon carbide substrates and epitaxial structures are investigated by nondestructive contactless methods. Parameters of the disrupted surface layer and roughnesses are determined using ellipsometry and atomic force microscopy. The free charge carrier concentration is determined by IR spectroscopy. The thicknesses in the multilayer epitaxial structure on SiC are determined using IR spectroscopy and scanning electron microscopy.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 218
This study was performed within the Research and Development Project Organization of Commercial Epitaxial Production of SiC Multilayer Structures for Domestic Electronic Instrumentation (code Resource-K) under assignment of the Ministry of Education and Science of the Russian Federation, which was the ninth stage of the Complex Project for Organization of High-Technological Production in accordance with Ordinance no. 218 of the Russian Federation Government from April 9, 2010.
Received: 19.12.2018
Revised: 19.12.2018
Accepted: 06.06.2019
English version:
Technical Physics, 2019, Volume 64, Issue 12, Pages 1774–1779
DOI: https://doi.org/10.1134/S1063784219120181
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Markov, M. F. Panov, V. P. Rastegaev, E. N. Sevostyanov, V. V. Trushlyakova, “Nondestructive control of the surface, layers, and charge carrier concentration on SiC substrates and structures”, Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019), 1869–1874; Tech. Phys., 64:12 (2019), 1774–1779
Citation in format AMSBIB
\Bibitem{MarPanRas19}
\by A.~V.~Markov, M.~F.~Panov, V.~P.~Rastegaev, E.~N.~Sevostyanov, V.~V.~Trushlyakova
\paper Nondestructive control of the surface, layers, and charge carrier concentration on SiC substrates and structures
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 12
\pages 1869--1874
\mathnet{http://mi.mathnet.ru/jtf5432}
\crossref{https://doi.org/10.21883/JTF.2019.12.48484.435-18}
\elib{https://elibrary.ru/item.asp?id=41848232}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 12
\pages 1774--1779
\crossref{https://doi.org/10.1134/S1063784219120181}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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