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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 8, Pages 1233–1237
DOI: https://doi.org/10.21883/JTF.2019.08.47897.355-18 (Mi jtf5542) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Solid-State Electronics

Comparative characteristic analysis of thermophotovoltaic $p$-InAsSbP/$n$-InAs converters irradiated on $p$- and $n$-sides

B. A. Matveeva, V. I. Ratushnyib, A. Yu. Rybalchenkob

a Ioffe Institute, St. Petersburg
b Volgodonsk Engineering and Technology Institute, Branch of National Research Nuclear University Moscow Engineering Physics Institute
Full-text PDF (146 kB) Citations (3)
DOI: https://doi.org/10.21883/JTF.2019.08.47897.355-18
Abstract: The basic characteristics of thermophotovoltaic heterostructure $p$-InAsSbP/$n$-InAs converters have been simulated. The converters have been designed so that a contact to the irradiated $p$-InAsSbP layer has a limited area or, in the flip-chip design, radiation is introduced through a contact-free part of the $n^+$-InAs substrate. It has been shown that the design features of the converter influence its efficiency and active region temperature.
Keywords: thermophotovoltaic converter, InAsSbP/InAs heterostructures, flip-chip, thermal mode.
Received: 09.10.2018
Revised: 27.01.2019
Accepted: 19.02.2019
English version:
Technical Physics, 2019, Volume 64, Issue 8, Pages 1164–1167
DOI: https://doi.org/10.1134/S1063784219080140
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybalchenko, “Comparative characteristic analysis of thermophotovoltaic $p$-InAsSbP/$n$-InAs converters irradiated on $p$- and $n$-sides”, Zhurnal Tekhnicheskoi Fiziki, 89:8 (2019), 1233–1237; Tech. Phys., 64:8 (2019), 1164–1167
Citation in format AMSBIB
\Bibitem{MatRatRyb19}
\by B.~A.~Matveev, V.~I.~Ratushnyi, A.~Yu.~Rybalchenko
\paper Comparative characteristic analysis of thermophotovoltaic $p$-InAsSbP/$n$-InAs converters irradiated on $p$- and $n$-sides
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 8
\pages 1233--1237
\mathnet{http://mi.mathnet.ru/jtf5542}
\crossref{https://doi.org/10.21883/JTF.2019.08.47897.355-18}
\elib{https://elibrary.ru/item.asp?id=41130878}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 8
\pages 1164--1167
\crossref{https://doi.org/10.1134/S1063784219080140}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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