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This article is cited in 11 scientific papers (total in 11 papers)
Solid-State Electronics
MBE-grown InSb photodetector arrays
A. K. Bakarovab, A. K. Gutakovskiia, K. S. Zhuravlevab, A. P. Kovchavtseva, A. I. Toropova, I. D. Burlakovc, K. O. Boltarc, P. V. Vlasovc, A. A. Lopukhinc a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c AO NPO Orion, Moscow, Russia
Abstract:
The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.
Received: 12.07.2016
Citation:
A. K. Bakarov, A. K. Gutakovskii, K. S. Zhuravlev, A. P. Kovchavtsev, A. I. Toropov, I. D. Burlakov, K. O. Boltar, P. V. Vlasov, A. A. Lopukhin, “MBE-grown InSb photodetector arrays”, Zhurnal Tekhnicheskoi Fiziki, 87:6 (2017), 900–904; Tech. Phys., 62:6 (2017), 915–919
Linking options:
https://www.mathnet.ru/eng/jtf6210 https://www.mathnet.ru/eng/jtf/v87/i6/p900
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