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Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 86, Issue 4, Pages 91–95
(Mi jtf6583)
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Physics of nanostructures
Effect of thermal annealing on the structure of ZnSe/Al$_{2}$O$_{3}$ nanocomposite films
A. A. Deduhin, P. N. Krilov, N. V. Kostenkov, R. M. Zakirova, I. V. Fedotova Udmurt State University, Izhevsk
Abstract:
The ZnSe/Al$_{2}$O$_{3}$ nanocomposite films synthesized by laser evaporation followed by heat treatment are studied. X-ray diffraction and electron-microscopic investigations of the as-deposited films demonstrate the presence of ZnSe crystallites in an Al$_{2}$O$_{3}$ amorphous matrix. Annealing changes the structures of ZnSe and Al$_{2}$O$_{3}$, increases the ZnSe crystallite size, and causes the appearance of the ZnSeO$_{4}$ phase. The presence of aluminum oxide layers decreases the phase transformation temperature of zinc selenide.
Keywords:
ZnSe, Electron Diffraction Pattern, Nanocomposite Film, Amorphous Matrix, Aluminum Oxide Layer.
Received: 13.07.2015
Citation:
A. A. Deduhin, P. N. Krilov, N. V. Kostenkov, R. M. Zakirova, I. V. Fedotova, “Effect of thermal annealing on the structure of ZnSe/Al$_{2}$O$_{3}$ nanocomposite films”, Zhurnal Tekhnicheskoi Fiziki, 86:4 (2016), 91–95; Tech. Phys., 61:4 (2016), 569–573
Linking options:
https://www.mathnet.ru/eng/jtf6583 https://www.mathnet.ru/eng/jtf/v86/i4/p91
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