Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs–GaAs-heterostructure to carrier-substrate

Development of lift-off technique of AlGaAs/GaAs-heterostructures, grown by the Metalorganic vapour-phase epitaxy, to GaAs carrier-substrate using silver-containing paste or Au-In compound has been carried out. Forming process of frontal ohmic contact to GaAs $n$-type conductivity based on contact systems Au(Ge)/Ni/Au and Pd/Ge/Au with specific contact resistance (2–5)$\cdot$10$^{-6}$ $\Omega$ $\cdot$ cm$^2$ has been investigated. Analyzed was the influence of heterostructure lift-off technique and forming process of frontal ohmic contact on the IR light-emitting diodes parameters: minimum light-emitting diodes (1 mm$^2$ square) series resistance was 0.16 $\Omega$. Optical power 270 mW at current 1.5 A has been achieved.