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Physics of nanostructures
Synthesis of arrays nanostructured porous silicon wires in electron conductivity type silicon with crystallographic orientation (111)
A. U. Gagarinaa, L. S. Bogoslovskayaa, Yu. M. Spivaka, K. N. Novikovab, A. Kuznetsova, V. A. Moshnikova a Saint Petersburg Electrotechnical University "LETI", 197376 St. Petersburg, Russia
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia
Abstract:
The method of modified metal-assisted electrochemical etching was proposed and arrays of nanostructured porous silicon wires on $n$-type monocrystalline silicon substrate with crystallographic orientation (111) were obtained. The influence of the electrolyte composition at the second stage of obtaining on the morphology of silicon wires by scanning electron microscopy methods was revealed. The phase composition of porous silicon wires was controlled by Raman spectroscopy.
Keywords:
porous silicon,porous silicon nanowires, mace, nanomaterials, Raman spectroscopy.
Received: 18.04.2022 Revised: 30.10.2022 Accepted: 31.10.2022
Citation:
A. U. Gagarina, L. S. Bogoslovskaya, Yu. M. Spivak, K. N. Novikova, A. Kuznetsov, V. A. Moshnikov, “Synthesis of arrays nanostructured porous silicon wires in electron conductivity type silicon with crystallographic orientation (111)”, Zhurnal Tekhnicheskoi Fiziki, 93:2 (2023), 271–280
Linking options:
https://www.mathnet.ru/eng/jtf6943 https://www.mathnet.ru/eng/jtf/v93/i2/p271
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