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Zhurnal Tekhnicheskoi Fiziki, 2023, Volume 93, Issue 4, Pages 562–567
DOI: https://doi.org/10.21883/JTF.2023.04.55045.259-22 (Mi jtf6981) 		 
Solid-State Electronics

Gettering effect in Cr/4$H$-SiC UV photodetectors under ptoton irradiation vith $E$ = 15 Mev

I. P. Nikitina, E. V. Kalinina, V. V. Zabrodskii

Ioffe Institute, St. Petersburg, Russia
Full-text PDF (301 kB)
DOI: https://doi.org/10.21883/JTF.2023.04.55045.259-22
Abstract: The mechanism of structure transformation in Cr/4$H$-SiC UV photodetectors, which is responsible for the cyclic gettering of radiation defects, under repeated proton irradiation, is proposed in this work.
Keywords: vacancies, clusters, gettering.
Funding agency Grant number
Russian Science Foundation 22-12-00003
This study was supported by the Russian Science Foundation (project № 22-12-00003).
Received: 30.11.2022
Revised: 17.01.2023
Accepted: 01.02.2023
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. P. Nikitina, E. V. Kalinina, V. V. Zabrodskii, “Gettering effect in Cr/4$H$-SiC UV photodetectors under ptoton irradiation vith $E$ = 15 Mev”, Zhurnal Tekhnicheskoi Fiziki, 93:4 (2023), 562–567
Citation in format AMSBIB
\Bibitem{NikKalZab23}
\by I.~P.~Nikitina, E.~V.~Kalinina, V.~V.~Zabrodskii
\paper Gettering effect in Cr/4$H$-SiC UV photodetectors under ptoton irradiation vith $E$ = 15 Mev
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2023
\vol 93
\issue 4
\pages 562--567
\mathnet{http://mi.mathnet.ru/jtf6981}
\crossref{https://doi.org/10.21883/JTF.2023.04.55045.259-22}
\elib{https://elibrary.ru/item.asp?id=53935266}
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