|
This article is cited in 1 scientific paper (total in 1 paper)
XXVII International Symposium "Nanophysics and Nanoelectronics" N. Novgorod, March 13-16, 2023
Physics of Nanostructures
Effect of combined ion and electron irradiation on 2 eV luminescence band in hexagonal boron nitride
Yu. V. Petrova, O. A. Goginaa, O. F. Vyvenkoa, S. Kovalchukb, K. Bolotinb a Saint Petersburg State University, St. Petersburg, Russia
b Free University of Berlin, 114195 Berlin, Germany
Abstract:
Point defects in wide-bandgap semiconductors, in particular in hexagonal boron nitride, are promising candidates for single-photon emitters, used in quantum informatics. The cathodoluminescence of ion beam induced defects in hexagonal boron nitride, as well as the effect of prolonged electron irradiation on the intensity of the luminescence was investigated. It has been shown that upon the ion irradiation the intensity of both band-to-band emission and defect related emission decreased, and during subsequent electron irradiation the intensity of 2 eV luminescence band increased, whereas the intensity of other bands remained unchanged.
Keywords:
cathodoluminescence, ion beam irradiation, electron beam irradiation, hexagonal boron nitride.
Received: 30.03.2023 Revised: 30.03.2023 Accepted: 30.03.2023
Citation:
Yu. V. Petrov, O. A. Gogina, O. F. Vyvenko, S. Kovalchuk, K. Bolotin, “Effect of combined ion and electron irradiation on 2 eV luminescence band in hexagonal boron nitride”, Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023), 921–927
Linking options:
https://www.mathnet.ru/eng/jtf7027 https://www.mathnet.ru/eng/jtf/v93/i7/p921
|
|