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Zhurnal Tekhnicheskoi Fiziki, 2023, Volume 93, Issue 7, Pages 1025–1031
DOI: https://doi.org/10.21883/JTF.2023.07.55764.91-23 (Mi jtf7045) 		 
XXVII International Symposium "Nanophysics and Nanoelectronics" N. Novgorod, March 13-16, 2023
Physical Electronics

Silicon-on-insulator structures microtopography transformations features after photonic and corpuscular radiation exposure

B. A. Loginova, D. Yu. Blinnikovb, V. S. Vtorovab, V. V. Kirillovab, E. A. Lyashkob, V. S. Makeevb, A. R. Pervykhb, N. D. Abrosimovac, I. Yu. Zabavichevcd, A. S. Puzanovcd, E. V. Volkovad, E. A. Tarasovad, S. V. Obolenskycd

a Moscow State Institute of Electronic Technology (Technical University), 124498 Zelenograd, Russia
b University of Science and Technology "Sirius", 354349 Sochi, Russia
c Federal State Unitary Enterprise RFNC-VNIIEF, RFNC-VNIIEF Branch "Measuring Systems Research Institute named after Yu.Ye. Sedakov", 603950 Nizhny Novgorod, Russia
d National Research Lobachevsky State University of Nizhny Novgorod, 603600 Nizhny Novgorod, Russia
Full-text PDF (1321 kB)
DOI: https://doi.org/10.21883/JTF.2023.07.55764.91-23
Abstract: The article presents the results of studies of microrelief parameters and electrophysical characteristics of “silicon on insulator” structures after exposure to gamma and gamma neutron radiation. Experimental studies were carried out using the methods of atomic force microscopy and pseudo-MOS transistor. On the basis of the data obtained, an estimate was made of the average size and area of the space charge of clusters of radiation defects.
Keywords: AFM, silicon on insulator, pseudo-MOS, “subthreshold” defect formation, radiation defects clusters.
Funding agency Grant number
National Center for Physics and Mathematics in Sarov
The study has been performed under the scientific program of the National Center for Physics and Mathematics (the “Nuclear and Radiation Physics” project).
Received: 04.05.2023
Revised: 04.05.2023
Accepted: 04.05.2023
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. A. Loginov, D. Yu. Blinnikov, V. S. Vtorova, V. V. Kirillova, E. A. Lyashko, V. S. Makeev, A. R. Pervykh, N. D. Abrosimova, I. Yu. Zabavichev, A. S. Puzanov, E. V. Volkova, E. A. Tarasova, S. V. Obolensky, “Silicon-on-insulator structures microtopography transformations features after photonic and corpuscular radiation exposure”, Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023), 1025–1031
Citation in format AMSBIB
\Bibitem{LogBliVto23}
\by B.~A.~Loginov, D.~Yu.~Blinnikov, V.~S.~Vtorova, V.~V.~Kirillova, E.~A.~Lyashko, V.~S.~Makeev, A.~R.~Pervykh, N.~D.~Abrosimova, I.~Yu.~Zabavichev, A.~S.~Puzanov, E.~V.~Volkova, E.~A.~Tarasova, S.~V.~Obolensky
\paper Silicon-on-insulator structures microtopography transformations features after photonic and corpuscular radiation exposure
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2023
\vol 93
\issue 7
\pages 1025--1031
\mathnet{http://mi.mathnet.ru/jtf7045}
\crossref{https://doi.org/10.21883/JTF.2023.07.55764.91-23}
\elib{https://elibrary.ru/item.asp?id=54384508}
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