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Zhurnal Tekhnicheskoi Fiziki, 2023, Volume 93, Issue 8, Pages 1143–1151
DOI: https://doi.org/10.21883/JTF.2023.08.55976.9-23 (Mi jtf7059) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Physical science of materials

Investigation of the filament properties in the HfO$_2$-based structures using conductive atomic force microscopy

A. G. Isaevab, O. O. Permyakovaab, A. E. Rogozhina

a Valiev Institute of Physics and Technology of Russian Academy of Sciences, Moscow, Russia
b Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Moscow oblast, Russia
Full-text PDF (1787 kB) Citations (1)
DOI: https://doi.org/10.21883/JTF.2023.08.55976.9-23
Abstract: The results of the research on the resistive switching in Pt/HfO$_2$/HfO$_x$N$_y$/TiN, Pt/HfO$_2$/TaO$_x$N$_y$/TiN and Pt/Al$_2$O$_3$/HfO$_2$/TaO$_x$N$_y$/TiN structures are presented. Active layers of the structures were deposited by atomic layer deposition. The formation of conductive filaments in all three structures was demonstrated using conductive atomic force microscopy. A full cycle of resistive switching with a microscope probe in these structures was also demonstrated. The properties of filaments formed at different voltages were studied, and the distributions of the filament density by conductivity and size were presented. The characteristics of the studied structures were compared. It appears that the Pt/Al$_2$O$_3$/HfO$_2$/TaO$_x$N$_y$/TiN structure has the greatest potential for resistive random-access memory application.
Keywords: memristor, resistive switching, resistive random-access memory, conductive atomic force microscopy.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation FFNN-2022-0019
The study was performed under the state assignment to the Valiev Institute of Physics and Technology of RAS of the Ministry of Education and Science of the Russian Federation on the topic № FFNN-2022-0019.
Received: 18.01.2023
Revised: 19.05.2023
Accepted: 16.06.2023
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. G. Isaev, O. O. Permyakova, A. E. Rogozhin, “Investigation of the filament properties in the HfO$_2$-based structures using conductive atomic force microscopy”, Zhurnal Tekhnicheskoi Fiziki, 93:8 (2023), 1143–1151
Citation in format AMSBIB
\Bibitem{IsaPerRog23}
\by A.~G.~Isaev, O.~O.~Permyakova, A.~E.~Rogozhin
\paper Investigation of the filament properties in the HfO$_2$-based structures using conductive atomic force microscopy
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2023
\vol 93
\issue 8
\pages 1143--1151
\mathnet{http://mi.mathnet.ru/jtf7059}
\crossref{https://doi.org/10.21883/JTF.2023.08.55976.9-23}
\elib{https://elibrary.ru/item.asp?id=54955551}
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    • This publication is cited in the following 1 articles:
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