Semipolar wide-band III–N-layers on a silicon substrate: orientation controlling epitaxy and the properties of structures (review)

The experimental results of the recent years on the synthesis of semipolar wide-band III–N-layers on a nanostructured silicon substrate are summarized. The idea of synthesis involves the formation of Si(111) side walls on the silicon surface, then the epitaxial nucleation of the layer in the “c” direction of the crystal, followed by the fusion of blocks in the semipolar direction of the surface. Examples of orientation controlling epitaxy of semipolar AlN(10-11)-, GaN(10-11)-, GaN(11-22)-layers synthesized on nanostructured Si(100), Si(113) substrates by methods of metalorganic vapor phase epitaxy and hydride vapor phase epitaxy are shown. The review presents a summary and the prospects for further developments in the field of optoelectronics based on the platform – “semipolar GaN on Si”.