Gradient layers in a four-component Al–Ga–As–Sn system growth by liquid-phase epitaxy

The growth of thick (more than 50 $\mu$m) Al$_x$Ga$_{1-x}$As gradient layers in the Al–Ga–As–Sn system has been modeled. Sn-doped Al$_x$Ga$_{1-x}$As layers up to 85 $\mu$m thick were obtained by liquid-phase epitaxy. The obtained experimental profiles of the Al$_x$Ga$_{1-x}$As composition gradient satisfy the used theoretical model for the cases of growth from a limited volume of a solution-melt.