Influence of contact area on memristive characteristics of parylene-based structures in single and crossbar geometry

The key elements of neuromorphic computing systems (NCS) are memristors – resistors with a memory effect – that can be used for simultaneous processing and storage of information. It is promising to create them in crossbar geometry, where memristors are located at the intersections of the transverse electrode buses. In this work, the influence of the area and geometry of contacts on the main memristive characteristics of parylene-based structures is investigated. The results obtained indicate the independence of such memristive characteristics as the switching voltage into the low-resistance $(U_{\mathrm{set}})$ and high-resistance states $(U_{\mathrm{reset}})$, as well as the resistance of the samples in the low-resistance $(R_{\mathrm{on}})$ state, from the contact area. At the same time, resistances in the high-resistance $(R_{\mathrm{off}})$ state increase with decreasing area, which confirms the single-filament model of resistive switching, and also makes it possible to increase the window of resistance in such structures.