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Solid-State Electronics
Eddy-current tunnel magnetic contacts with a composite free layer
I. Yu. Pashen'kina, E. V. Skorokhodova, M. V. Sapozhnikovba, A. A. Fraermana, G. A. Kichinc, K. A. Zvezdindc a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
b National Research Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
c Russian Quantum Center, New Spintronic Technologies, Moscow, Russia
d Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
Abstract:
A new method was offered to design tunnel magnetoresistive CoFeB/MgO/CoFeB contacts with free layer vortex magnetization configuration. Contacts are made using electron-beam lithography methods and have lateral sizes of $\sim$700 nm. The achieved tunnel magnetoresistance effect was equal to 80–120% for various samples. Thanks to low coercitivity, the magnetoresistance curve has a linear section without magnetic hysteresis that corresponds to vortex offset from the central position. Such types of contacts show spin-transfer diode properties – they feature rectification of high-frequency signals on vortex magnetization configurations.
Keywords:
magnetic tunnel contacts, spin-transfer diode effect, vortex spin-transfer nanooscillators.
Received: 07.07.2023 Revised: 14.09.2023 Accepted: 25.09.2023
Citation:
I. Yu. Pashen'kin, E. V. Skorokhodov, M. V. Sapozhnikov, A. A. Fraerman, G. A. Kichin, K. A. Zvezdin, “Eddy-current tunnel magnetic contacts with a composite free layer”, Zhurnal Tekhnicheskoi Fiziki, 93:11 (2023), 1616–1621
Linking options:
https://www.mathnet.ru/eng/jtf7128 https://www.mathnet.ru/eng/jtf/v93/i11/p1616
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