Silicon ablation in air by mono- and bichromatic laser pulses with wavelength 355 and 532 nm

Ablation of silicon sample in air under irradiance of single and double laser pulses with wavelengths 355 and 532 nm was studied by means of optical and scanning electron microscopy, raman spectroscopy, profilometry of laser craters as well as video registration of plasma’s plume radiation in time. Dependence of specific sample’s material removal on laser fluence and time interval between coupled pulses of bichromatic laser irradiance was established. Spallation of silicon was found in broad range of irradiance parameters and parameters of craters formed by ablation and spallation under the action of bichromatic laser radiation were determined.