Study of the influence of the energy of argon ions on the surface roughness of the main sections of single-crystal silicon

The paper presents the results of studying the energy dependences of the sputtering yields and the value of the effective surface roughness of single-crystal silicon upon irradiation with argon ions with an energy of 200–1000 eV. As a result of the work, the parameters of ion-beam etching with accelerated Ar ions were determined, providing a high sputtering yield (etching rate) and an effective roughness value in the spatial frequency range 4.9$\cdot$10$^{-2}$–6.3$\cdot$10$^1$ $\mu$m$^{-1}$ less than 0.3 nm for the main cuts monocrystalline silicon $\langle$100$\rangle$, $\langle$110$\rangle$ and $\langle$111$\rangle$.