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Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 85, Issue 1, Pages 138–141
(Mi jtf7670)
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This article is cited in 19 scientific papers (total in 19 papers)
Physical electronics
Multitip semiconductor field emitters with new-type bilayer protecting coatings
G. G. Sominskiia, T. A. Tumarevaa, E. P. Taradaeva, M. V. Mishina, A. N. Stepanovab a Peter the Great St. Petersburg Polytechnic University
b Institute of Cristallography Russian Academy of Sciences, Moscow
Abstract:
We investigate the operation of multitip silicon field emitters with new-type bilayer metal–fullerene protective coatings in technical vacuum. The experiments indicate that such cathodes ensures emission current densities averaged over the cathode surface of about 0.5 A/cm$^2$ and can be used in high-voltage devices including microwave electronic instruments as well as portable X-ray sources.
Received: 01.06.2014
Citation:
G. G. Sominskii, T. A. Tumareva, E. P. Taradaev, M. V. Mishin, A. N. Stepanova, “Multitip semiconductor field emitters with new-type bilayer protecting coatings”, Zhurnal Tekhnicheskoi Fiziki, 85:1 (2015), 138–141; Tech. Phys., 60:1 (2015), 133–136
Linking options:
https://www.mathnet.ru/eng/jtf7670 https://www.mathnet.ru/eng/jtf/v85/i1/p138
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