Effect of the O$_2^+$-ion bombardment on the TiN composition and structure

The implantation of the O$_2^+$ ions at low energies of $E_0\le$ 2–3 keV and high doses of $D\ge$ 10$^{16}$ cm$^{-2}$ leads to significant variations in the composition and amorphization of the TiN surface layer. The postimplantation annealing at a temperature of $T\approx$ 950–1000 K over 30 min results in the formation of a polycrystalline film with approximate composition ТiN$_{0.6}$О$_{0.4}$. Based on the analysis of photoelectron spectra, we assume that the TiN and ТiN$_{0.6}$О$_{0.4}$ films represent degenerate narrow-band-gap $n$-type semiconductors.