Analysis of profiles of atomic distribution over the depth of Si–Me free nanofilm systems

We report on the results of analysis of the composition, crystal structure, and profiles of atomic distribution over the depth of a free Cu (100) film with coated with Si nanofilms with various thicknesses. It is shown that for silicon film thickness $d_{\mathrm{Si}}$ = 5.0 nm, silicon and copper atoms form a Cu$_x$Si$_y$-type compound. With increasing film thickness ($d_{\mathrm{Si}}>$ 5.0 nm), a silicon film is formed on the silicides surface. After heating, a transition layer of Cu$_2$Si$_3$ silicide of thickness $d$ = 8.0–10.0 nm is formed on the Si/Cu interface.