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Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 85, Issue 6, Pages 111–117 (Mi jtf7807)  
This article is cited in 9 scientific papers (total in 9 papers)

Solid-State Electronics

High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters

P. A. Ivanov, I. V. Grekhov

Ioffe Institute, St. Petersburg
Full-text PDF (157 kB) Citations (9)
Abstract: A simple mathematical model of 4H:SiC sharp-recovery drift diodes with a $p^+$–$p$–$n_0$–$n^+$ structure. With this model, the limiting electrical parameters of high-voltage (2–10 kV) pulse generators built around these diodes are theoretically estimated.
Received: 17.11.2014
English version:
Technical Physics, 2015, Volume 60, Issue 6, Pages 897–902
DOI: https://doi.org/10.1134/S1063784215060092
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. A. Ivanov, I. V. Grekhov, “High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters”, Zhurnal Tekhnicheskoi Fiziki, 85:6 (2015), 111–117; Tech. Phys., 60:6 (2015), 897–902
Citation in format AMSBIB
\Bibitem{IvaGre15}
\by P.~A.~Ivanov, I.~V.~Grekhov
\paper High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2015
\vol 85
\issue 6
\pages 111--117
\mathnet{http://mi.mathnet.ru/jtf7807}
\elib{https://elibrary.ru/item.asp?id=24196114}
\transl
\jour Tech. Phys.
\yr 2015
\vol 60
\issue 6
\pages 897--902
\crossref{https://doi.org/10.1134/S1063784215060092}
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    • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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