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Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 85, Issue 10, Pages 148–151 (Mi jtf7922)  
This article is cited in 13 scientific papers (total in 13 papers)

Brief Communications

Electronic structure of Ga$_{1-x}$Al$_x$As nanostructures grown on the GaAs surface by ion implantation

S. B. Donaev, B. E. Umirzakov, D. A. Tashmukhamedova

Tashkent State Technical University named after Islam Karimov
Full-text PDF (370 kB) Citations (13)
Abstract: The surface morphology and electronic properties of nanocrystalline phases and 2–7-nm-thick Ga$_{1-x}$Al$_x$As films grown on the GaAs(111) surface by Al$^+$ ion implantation with subsequent (laser + thermal) annealing are studied. It is found that bandgap $E_g$ of the Ga$_{0.5}$Al$_{0.5}$As nanocrystalline surface phase 25–30 nm in size equals 2.8–2.9 eV.
Received: 13.01.2015
English version:
Technical Physics, 2015, Volume 60, Issue 10, Pages 1563–1566
DOI: https://doi.org/10.1134/S1063784215100138
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. B. Donaev, B. E. Umirzakov, D. A. Tashmukhamedova, “Electronic structure of Ga$_{1-x}$Al$_x$As nanostructures grown on the GaAs surface by ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 85:10 (2015), 148–151; Tech. Phys., 60:10 (2015), 1563–1566
Citation in format AMSBIB
\Bibitem{DonUmiTas15}
\by S.~B.~Donaev, B.~E.~Umirzakov, D.~A.~Tashmukhamedova
\paper Electronic structure of Ga$_{1-x}$Al$_x$As nanostructures grown on the GaAs surface by ion implantation
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2015
\vol 85
\issue 10
\pages 148--151
\mathnet{http://mi.mathnet.ru/jtf7922}
\elib{https://elibrary.ru/item.asp?id=24196230}
\transl
\jour Tech. Phys.
\yr 2015
\vol 60
\issue 10
\pages 1563--1566
\crossref{https://doi.org/10.1134/S1063784215100138}
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    • This publication is cited in the following 13 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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