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Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 84, Issue 1, Pages 79–85 (Mi jtf7985)  
This article is cited in 2 scientific papers (total in 2 papers)

Solid-State Electronics

Formation conditions for InAs/GaAs quantum dot arrays by droplet epitaxy under MOVPE conditions

R. Kh. Akchurina, L. B. Berlinera, I. A. Boginskayaa, E. G. Gordeeva, E. V. Egorovaa, A. A. Marmalyukb, M. A. Laduginb, M. A. Surninaa

a MIREA — Russian Technological University, Moscow
b "Sigm Plyus" Ltd., Moscow
Full-text PDF (935 kB) Citations (2)
Abstract: The first stage of formation of InAs/GaAs quantum-dot heterostructures by droplet epitaxy is investigated. Factors influencing the geometrical size and density of arrays of indium nanodrops deposited by trimethylindium pyrolysis on the GaAs(100) substrate are analyzed, and the possibility of using these factors in the process of metal-organic vapor phase epitaxy (MOVPE) are studied. To refine the temperature dependence of the In evaporation rate, a computational experiment taking into account real MOVPE conditions is conducted. An ultimate change in the composition of In droplets contacting the substrate at a high temperature is estimated, and the thickness and composition of crystallizing In–Ga–As solid solution are calculated. It is shown that the size and density of the droplet array to a great extent depend on the crystallochemical structure of the substrate surface and deposition conditions.
Received: 09.01.2013
English version:
Technical Physics, 2014, Volume 59, Issue 1, Pages 78–84
DOI: https://doi.org/10.1134/S1063784214010034
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. Kh. Akchurin, L. B. Berliner, I. A. Boginskaya, E. G. Gordeev, E. V. Egorova, A. A. Marmalyuk, M. A. Ladugin, M. A. Surnina, “Formation conditions for InAs/GaAs quantum dot arrays by droplet epitaxy under MOVPE conditions”, Zhurnal Tekhnicheskoi Fiziki, 84:1 (2014), 79–85; Tech. Phys., 59:1 (2014), 78–84
Citation in format AMSBIB
\Bibitem{AkcBerBog14}
\by R.~Kh.~Akchurin, L.~B.~Berliner, I.~A.~Boginskaya, E.~G.~Gordeev, E.~V.~Egorova, A.~A.~Marmalyuk, M.~A.~Ladugin, M.~A.~Surnina
\paper Formation conditions for InAs/GaAs quantum dot arrays by droplet epitaxy under MOVPE conditions
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2014
\vol 84
\issue 1
\pages 79--85
\mathnet{http://mi.mathnet.ru/jtf7985}
\elib{https://elibrary.ru/item.asp?id=21310953}
\transl
\jour Tech. Phys.
\yr 2014
\vol 59
\issue 1
\pages 78--84
\crossref{https://doi.org/10.1134/S1063784214010034}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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