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Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 84, Issue 2, Pages 70–75 (Mi jtf8006)  
This article is cited in 27 scientific papers (total in 27 papers)

Physical science of materials

Optical characteristics of porous silicon structures

A. S. Len'shin, V. M. Kashkarov, P. V. Seredin, B. L. Agapov, D. A. Minakov, V. N. Tsipenyuk, È. P. Domashevskaya

Voronezh State University
Full-text PDF (4269 kB) Citations (27)
Abstract: Morphology, composition, and optical properties of porous silicon on single-crystal-silicon substrates and $p$–$n$ junctions are studied. Substrate orientation, type of conduction, and composition of etching agent are varied to obtain nano-, meso-, and microporous silicon and multilayer porous structures. A correlation of the photoluminescence intensity and intensity of the IR absorption band peaking at 616 cm$^{-1}$ is related to the presence of Si–Si bonds.
Received: 16.04.2013
English version:
Technical Physics, 2014, Volume 59, Issue 2, Pages 224–229
DOI: https://doi.org/10.1134/S1063784214020145
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Len'shin, V. M. Kashkarov, P. V. Seredin, B. L. Agapov, D. A. Minakov, V. N. Tsipenyuk, È. P. Domashevskaya, “Optical characteristics of porous silicon structures”, Zhurnal Tekhnicheskoi Fiziki, 84:2 (2014), 70–75; Tech. Phys., 59:2 (2014), 224–229
Citation in format AMSBIB
\Bibitem{LenKasSer14}
\by A.~S.~Len'shin, V.~M.~Kashkarov, P.~V.~Seredin, B.~L.~Agapov, D.~A.~Minakov, V.~N.~Tsipenyuk, \`E.~P.~Domashevskaya
\paper Optical characteristics of porous silicon structures
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2014
\vol 84
\issue 2
\pages 70--75
\mathnet{http://mi.mathnet.ru/jtf8006}
\elib{https://elibrary.ru/item.asp?id=21310975}
\transl
\jour Tech. Phys.
\yr 2014
\vol 59
\issue 2
\pages 224--229
\crossref{https://doi.org/10.1134/S1063784214020145}
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    • This publication is cited in the following 27 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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