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Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 84, Issue 3, Pages 99–102
(Mi jtf8036)
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This article is cited in 4 scientific papers (total in 4 papers)
Solid-State Electronics
Spectral anisotropy of a photoresponse from heterojunctions based on GaSe and InSe layered crystals
V. N. Katerinchuk, Z. R. Kudrynskyi, Z. D. Kovalyuk Frantsevich Institute for Problems in Materials Science, National Academy of Sciences of Ukraine, Chernovtsy, 58001, Ukraine
Abstract:
The object of investigation is photoresponse spectra taken from the cleaved end face of heterojunctions formed by GaSe and InSe anisotropic crystals. Spectra taken from the as-prepared and chemically processed faces of the heterojunctions are compared. A modified method of growing GaSe crystals with a virgin end face is suggested, and the surface of GaSe crystals thus grown is examined by atomic force microscopy.
Received: 02.04.2013
Citation:
V. N. Katerinchuk, Z. R. Kudrynskyi, Z. D. Kovalyuk, “Spectral anisotropy of a photoresponse from heterojunctions based on GaSe and InSe layered crystals”, Zhurnal Tekhnicheskoi Fiziki, 84:3 (2014), 99–102; Tech. Phys., 59:3 (2014), 407–410
Linking options:
https://www.mathnet.ru/eng/jtf8036 https://www.mathnet.ru/eng/jtf/v84/i3/p99
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