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Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 84, Issue 8, Pages 102–105 (Mi jtf8171)  
This article is cited in 5 scientific papers (total in 5 papers)

Solid-State Electronics

Photosensitive anisotype $n$-ZnSe/$p$-InSe and $n$-ZnSe/$p$-GaSe heterojunctions

Z. R. Kudrynskyi, Z. D. Kovalyuk

Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Kiev
Full-text PDF (167 kB) Citations (5)
Abstract: Anisotype $n$-ZnSe/$p$-InSe and $n$-ZnSe/$p$-GaSe heterojunctions are obtained for the first time. They are grown on layered crystalline GaSe and InSe substrates by annealing in Zn vapor. It is found that these heterojunctions are sensitive to light in the near-infrared and visible spectral ranges.
Received: 30.08.2013
Accepted: 22.01.2014
English version:
Technical Physics, 2014, Volume 59, Issue 8, Pages 1205–1208
DOI: https://doi.org/10.1134/S106378421408012X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Z. R. Kudrynskyi, Z. D. Kovalyuk, “Photosensitive anisotype $n$-ZnSe/$p$-InSe and $n$-ZnSe/$p$-GaSe heterojunctions”, Zhurnal Tekhnicheskoi Fiziki, 84:8 (2014), 102–105; Tech. Phys., 59:8 (2014), 1205–1208
Citation in format AMSBIB
\Bibitem{KudKov14}
\by Z.~R.~Kudrynskyi, Z.~D.~Kovalyuk
\paper Photosensitive anisotype $n$-ZnSe/$p$-InSe and $n$-ZnSe/$p$-GaSe heterojunctions
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2014
\vol 84
\issue 8
\pages 102--105
\mathnet{http://mi.mathnet.ru/jtf8171}
\elib{https://elibrary.ru/item.asp?id=22019401}
\transl
\jour Tech. Phys.
\yr 2014
\vol 59
\issue 8
\pages 1205--1208
\crossref{https://doi.org/10.1134/S106378421408012X}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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